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2SK2615 MOSFET N-Channel 60V 2A SOT-89/PW-Mini marking ZA DC-DC converter/relay drive/motor drive
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.23Ω/Ohm @1A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-2.0V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) DC−DC Converter, Relay Drive and Motor Drive Applications Features Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.23 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) Enhancement−mode |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS型（L2-π-MOSV） DC-DC转换器，继电器驱动和电机驱动应用 特性 硅N沟道MOS型 DC-DC转换器，继电器驱动和电机驱动 应用 低漏源导通电阻RDS（ON）= 0.23Ω（典型值） 高正向转移导纳：| YFS|=2.0 S（典型值） 低漏电流：IDSS=100μA（最大值）（VDS=60 V） 增强型 |
