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2sk2857 MOSFET N-Channel 60V 4A SOT-89 marking NX low on-resistance/fast switch

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Product description
最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current4A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.11Ω/Ohm @2.5A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1-2V
耗散功率Pd Power Dissipation2W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK2857 is a switching device which can be driven directly by a 5V power source. The 2SK2857 features a low on-state resistance and excellent Switching Characteristics, and is suitable for applications such as actuator driver. Features N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Can be driven by a 5V power source. Low On-state resistance : RDS(on)1 = 220 mΩ MAX. (VGS = 4 V, ID = 1.5 A) RDS(on)2 = 150 mΩ MAX. (VGS = 10 V, ID = 2.5 A)
描述与应用MOS场效应晶体管 N沟道MOS场效应晶体管 用于高速开关 说明 2SK2857是一个可以由5V电源直接驱动的开关设备。 2SK2857采用了低通态电阻和优良 开关特性,是适合于应用程序,如致动器的驱动程序。 特性 N沟道MOS场效应晶体管 用于高速开关 可以由一个5V电源。 低导通电阻: RDS(on)1 =220mΩ最大。 (VGS=4 V,ID= 1.5 A) RDS(on)2 =150mΩ最大。 (VGS=10V,ID=2.5 A)
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