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2SK2926 MOSFET N-Channel 60V 15A TO-252/D-PAK marking K2926 high-speed power switch/low on-resistance/4V gate driver
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 15A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.042Ω/Ohm @8A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.5-2.5V |
| 耗散功率Pd Power Dissipation | 25W |
| Description & Applications | Silicon N Channel MOS FET High Speed Power Switching Features Silicon N Channel MOS FET High Speed Power Switching Low on-resistance RDS(on)= 0.042Ω typ 4V gate drive devices High speed switching |
| 描述与应用 | 硅N沟道MOS FET 高速电源开关 特性 硅N沟道MOS FET 高速电源开关 低导通电阻RDS（ON）=0.042Ω典型 4V栅极驱动装置 高速开关 |
