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2SK3289 MOSFET N-Channel 30V 300mA/0.3A SOT-323/SC-70/CMPAK marking AN fast switch/low on-resistance/4V gate driver
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 300mA/0.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 1.26Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.3-2.3V |
| 耗散功率Pd Power Dissipation | 400mW/0.4W |
| Description & Applications | Silicon N Channel MOS FET High Speed Switching Features Silicon N Channel MOS FET High Speed Switching Low on-resistance RDS= 1.26Ω typ(at VGS=10V , ID =150mA) RDS= 2.8Ω typ(at VGS=4V , ID =50mA) 4V gate drive device Small package (CMPAK) |
| 描述与应用 | 硅N沟道MOS FET 高速开关 特性 硅N沟道MOS FET 高速开关 低导通电阻 RDS=1.26Ω（典型值）（VGS= 10V，ID=150毫安） RDS=2.8Ω典型值（VGS=4V，ID=50毫安） 4V栅极驱动器 小型封装（CMPAK） |
