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2SK360IGE MOSFET N-Channel 20V 30mA SOT-23/SC-59 marking IGE VHF amplifier

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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage5V
最大漏极电流Id Drain Current30mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage0-2V
耗散功率Pd Power Dissipation150mW/0.15W
Description & ApplicationsSilicon N-Channel MOS FET VHF amplifier Features Silicon N-Channel MOS FET VHF amplifier
描述与应用硅N沟道MOS场效应管高频放大器 特性 硅N沟道MOS FET VHF放大器
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