2SK620 MOSFET N-Channel 50V 100mA/0.1A SOT-23/SC-59 marking 3N no secondary breakdown/4 V gate drive-logical level|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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2SK620 MOSFET N-Channel 50V 100mA/0.1A SOT-23/SC-59 marking 3N no secondary breakdown/4 V gate drive-logical level

Model：2SK620
Mark / screen / code / typing：3N
Manufacturer：
Date Code：05+ 05+07NOPB18KM+50K
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	50V
最大栅源极电压Vgs(±) Gate-Source Voltage	8V
最大漏极电流Id Drain Current	100mA/0.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance	50Ω/Ohm @20mA,5V
开启电压Vgs（th） Gate-Source Threshold Voltage	1.5-3.5V
耗散功率Pd Power Dissipation	150mW/0.15W
Description & Applications	Silicon MOS FETs (Small Signal) Silicon N-Channel MOS FET For switching Features Silicon N-Channel MOS FET For switching High-speed switching Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing
描述与应用	硅MOS场效应管（小信号）硅N沟道MOS FET开关特性硅N沟道MOS FET 用于开关高速开关迷你型包装，让瘦身套和通过自动插入磁带/盒包装

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Commodity Description	Supplier model	Manufacturer	Explain	Stock
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2SK663-Q JFET N-Channel 55v 2~6.5mA SOT-323 marking 2BQ low frequency amplifier， switch	2SK663-Q Mark：2BQ Package：SOT-323/SC70	-	Batch number：05+	0 Min Order:10
2SK664 MOSFET N-Channel 50V 100mA/0.1A SOT-323/SC-70 marking 3N fast switch	2SK664 Mark：3N Package：SOT-323/SC-70	-	Batch number：05+ 05+	9000 Min Order:10
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