Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
2SK853A JFET N-Channel 50v 0.5~12mA SOT-323 marking K24 AF,RF amplifier
| 最大源漏极电压Vds Drain-Source Voltage | 50v |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -50v |
| 漏极电流(Vgs=0V)IDSS Drain Current | 0.5~12ma |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | -0.25~-4.5v |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | •Silicon N-Channel Junction FET AF&RF AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR The 2SK853, 2SK853A are designed for hybrid IC which is designed for use in analog-switch, variable-resistor, RF amplifier and AF amplifier |
| 描述与应用 | •硅N沟道结型场效应管 AF＆RF放大器 N-沟道硅结型场效应晶体管 2SK8532SK853A是专为混合IC，其目的是使用模拟开关，可变电阻器，RF放大器和AF放大器 |
