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3SK232 MOSFET N-Channel 12.5 30mA SOT-143/SOT-24/SC-61 marking UO low noise gain control amplifier/enhancement mode

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$0.234
≤99
$0.211
≤499
$0.176
≤999
$0.152
≤2999
$0.140
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Product description
最大源漏极电压Vds Drain-Source Voltage12.5
最大栅源极电压Vgs(±) Gate-Source Voltage8V
最大漏极电流Id Drain Current30mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage0.4-1.4/0.5-1.5
耗散功率Pd Power Dissipation150mW/0.15W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier Applications • Superior cross modulation performance. • Low reverse transfer capacitance.: Crss = 20 fF (typ.) • Low noise figure.: NF = 1.5dB (typ.) TV Tuner, UHF RF Amplifier Applications • Superior cross modulation performance. • Low reverse transfer capacitance.: Crss = 20 fF (typ.) • Low noise figure.: NF = 1.5dB (typ.)
描述与应用东芝场效应晶体管的硅N沟道双栅MOS类型 电视调谐器,超高频射频放大器应用 •高级交叉调制性能。 •低反向传输电容:CRSS= 20 FF(典型值) •低噪声系数:NF=1.5分贝(典型值) 电视调谐器,超高频射频放大器应用 •高级交叉调制性能。 •低反向传输电容: CRSS= 20 FF(典型值) •低噪声系数:NF=1.5分贝(典型值
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