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3SK285 MOSFET N-Channel 13V 30mA SOT-143 marking HV high frequency

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Product description
最大源漏极电压Vds Drain-Source Voltage13V
最大栅源极电压Vgs(±) Gate-Source Voltage8V
最大漏极电流Id Drain Current30mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage-1-1/0-1V
耗散功率Pd Power Dissipation150mW/0.15W
Description & ApplicationsHigh Frequency FETs Silicon N-Channel MOS FET For UHF amplification Features lLow noise-figure (NF) lLarge power gain PG Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing
描述与应用高频场效应管 硅N沟道MOS FET 对于UHF扩增 LLOW噪声系数(NF) lLarge功率增益PG 迷你型包装,使瘦身套和自动 通过插入磁带/盒包装
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