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3SK319 MOSFET N-Channel 6V 20mA SOT-143/MPAK-4 marking YB Excellent cross modulation characteristics/low voltage operating/low noise
| 最大源漏极电压Vds Drain-Source Voltage | 6V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 6V |
| 最大漏极电流Id Drain Current | 20mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 6V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier Features •Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) •Excellent cross modulation characteristics •Capable low voltage operation; |
| 描述与应用 | 硅N沟道双栅MOS FET UHF射频放大器 •低噪音特点;（NF=1.4 dB（典型值），在f=900兆赫） •优秀的交叉调制特性 •低电压工作能力; |
