5HN02M-TL MOSFET N-Channel 50V 200mA/0.2A SOT-23/SC-59 marking YF low on-resistance/ultra highspeed switch|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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5HN02M-TL MOSFET N-Channel 50V 200mA/0.2A SOT-23/SC-59 marking YF low on-resistance/ultra highspeed switch

Model：5HN02M-TL
Mark / screen / code / typing：YF
Manufacturer：
Date Code：05+ 05+
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	50V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	200mA/0.2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs（th） Gate-Source Threshold Voltage	1-2.4V
耗散功率Pd Power Dissipation	250mW/0.25W
Description & Applications	N-channel Silicon MOSFET General -Purpose Switching Device Application Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.
描述与应用	N沟道硅MOSFET 通用开关设备应用程序 •低导通电阻。 •超高速开关。 •4V驱动器

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