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AF2302NWLA MOSFET N-Channel 20V 10mA SOT-23/SC-59 marking 026A fast switch/low on-resistance

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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage8V
最大漏极电流Id Drain Current10mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.65Ω/Ohm @3.6A,4.0V
开启电压Vgs(th) Gate-Source Threshold Voltage1.2V
耗散功率Pd Power Dissipation150mW/0.15W
Description & ApplicationsN-Channel Enhancement Mode Power MOSFET Description The advanced power MOSFET provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Features Simple Gate Drive 2KV ESD Rating (Per MIL-STD-883D) Small Package Outline (SOT323)
描述与应用N沟道增强模式功率MOSFET 描述 先进的功率MOSFET提供设计师 快速切换的最佳组合,低 导通电阻和成本效益。 简单的栅极驱动器 2KV ESD额定值(每MIL-STD-883D) 小型封装(SOT323
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