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AO6704L complex FET MOSFET+schottky diode 30V 3.6A 1.5A 0.39V SOT-163/SOT23-6/TSOP6 marking G4D DC-DC converter/low gate charge
最大源漏极电压Vds Drain-Source Voltage | N沟道 N-Channel |
最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
最大漏极电流Id Drain Current | 12V |
源漏极导通电阻Rds Drain-Source On-State Resistance | 3.6A |
开启电压Vgs(th) Gate-Source Threshold Voltage | 65mΩ@ VGS = 10V, ID = 3.6A |
耗散功率Pd Power Dissipation | 1~1.8V |
Description & Applications | 肖特基二极管SBD Schottky Barrier Diodes |
描述与应用 | 20V |