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AP2623Y Complex FET -30V -2A SOT-163/SOT23-6/CPH6 marking Y7E1 low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-2A
源漏极导通电阻Rds
Drain-Source On-State Resistance
170mΩ@ VGS = -10V,ID = -2A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1~-3V
耗散功率Pd
Power Dissipation
1.2W
Description & ApplicationsP-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge Low On-resistance RDS(ON) Surface Mount Package Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SOT-26 package is universally used for all commercial-industrial applications.
描述与应用P沟道增强型功率MOSFET 低栅极电荷 低导通电阻RDS(ON) 表面贴装封装 描述 先进的功率MOSFET采用先进的加工技术,以实现尽可能低的导通电阻,非常高效和成本效益装置。SOT-26封装普遍用于所有商业,工业应用。
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