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APM2314AC-TRL MOSFET N-Channel 20V 2.8A SOT-23/SC-59 marking M147 high density battery design

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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage10V
最大漏极电流Id Drain Current2.8A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.060Ω/Ohm @1.2A,4.5V
开启电压Vgs(th) Gate-Source Threshold Voltage1.3V
耗散功率Pd Power Dissipation1.25W
Description & Applications20V/2.8A RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=55mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design for ExtremelyLow RDS(ON) Reliable and Rugged SOT-23 Package
描述与应用20V/2.8A RDS(ON)=45mΩ(典型值)@ VGS=4.5V RDS(ON)=55mΩ(典型值)@ VGS=2.5V 超级高密度电池设计ExtremelyLow RD(ON)可靠耐用 SOT-23封装
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