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AT-32033-TR1 NPN Transistors(BJT) 11V 32 mA 5GHz 70~300 2.7V SOT-23/SC-59 marking 320

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
11V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
5.5V
集电极连续输出电流IC
Collector Current(IC)
32 mA
截止频率fT
Transtion Frequency(fT)
5GHz
直流电流增益hFE
DC Current Gain(hFE)
70~300
管压降VCE(sat)
Collector-Emitter Saturation Voltage
2.7V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & ApplicationsLow Current, High Performance NPN Silicon Bipolar Transistor Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-32011: 1 dB NF, 14 dB GA AT-32033: 1 dB NF, 12.5 dB GA • Characterized for End-OfLife Battery Use (2.7 V) • SOT-23 and SOT-143 SMT Plastic Packages • Tape-And-Reel Packaging Option Available
描述与应用低电流,高性能 NPN硅双极晶体管 特点 •高性能双极晶体管优化 低电流,低电压操作 •900兆赫绩效: AT-32011:1分贝,14分贝(NF)GA AT-32033:1分贝,12.5分贝(NF)GA •其特点为的最终OfLife电池使用(2.7 V) •SOT-23和SOT-143 SMT塑料封装 •磁带和卷轴包装选项可用
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