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BB503MCS-TL MOSFET N-Channel 6V 20mA SOT-143/MPAK-4 marking CS high gain/low noise/withstanding to ESD

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Product description
最大源漏极电压Vds Drain-Source Voltage6V
最大栅源极电压Vgs(±) Gate-Source Voltage6V
最大漏极电流Id Drain Current20mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage0.5-1.0V
耗散功率Pd Power Dissipation150mW/0.15W
Description & ApplicationsBuilt in Biasing Circuit; To reduce using parts cost & PC board space. •High gain; (PG = 29 dB typ. at f = 200 MHz) •Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) •Wide supply voltage range; Applicable with 5V to 9V supply voltage. •Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. •Provide mini mold packages; CMPAK-4(SOT-343mod)
描述与应用内置偏置电路降低零部件的成本与PC板空间。 •高增益; (PG= 29 dB典型值在f=200兆赫)。 •低噪音特点; (NF=1.2 dB(典型值),在f=200兆赫) •宽电源电压范围; 适用9V电源电压5V。 •耐静电; 内置ESD吸收二极管。承受高达200V在C = 200pF,Rs = 0条件。 •提供小型模具包; CMPAK-4(SOT-343mod)
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