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BC846S NPN+NPN Complex Bipolar Transistor 80V 100mA HEF=200~450 SOT-363 marking 1D switch and digital circuit application

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Product description


Collector-Base Voltage



Collector-Emitter Voltage

Collector Current(IC)  100MA/0.1A
Transtion Frequency(fT)  250MHZ
DC Current Gain(hFE)  200~450

VCE (sat)

Collector-Emitter Saturation Voltage

Power Dissipation (Pd)  0.25W
Description & Applications  Features •NPN Silicon AF Transistor Array•For AF input stages and driver applications•High current gain•Low collector-emitter saturation voltage•Two ( galvanic) internal isolated Transistors•with good matching in one package
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