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BC846S NPN+NPN Complex Bipolar Transistor 80V 100mA HEF=200~450 SOT-363 marking 1D switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
80V |
|
V(BR) CEO Collector-Emitter Voltage |
65V |
| Collector Current(IC) | 100MA/0.1A |
| Transtion Frequency(fT) | 250MHZ |
| DC Current Gain(hFE) | 200~450 |
|
VCE (sat) Collector-Emitter Saturation Voltage |
0.65V |
| Power Dissipation （Pd） | 0.25W |
| Description & Applications | Features •NPN Silicon AF Transistor Array•For AF input stages and driver applications•High current gain•Low collector-emitter saturation voltage•Two ( galvanic) internal isolated Transistors•with good matching in one package |
| Technical Documentation Download | Read Online |
