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BC857A PNP transistors(BJT) -80V -100mA/-0.1A 100MHz 220~475 -650mV/-0.65V SOT-23/SC-59 marking 3E

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−65V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
220~475
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−650mV/-0.65V
耗散功率Pc
PoWer Dissipation
225mW/0.225W
Description & ApplicationsGeneral Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available
描述与应用通用晶体管 PNP硅 特点 •无铅包可用
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