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BCW66G NPN Transistors(BJT) 75V 1A 100MHz 160~400 700mV/0.7V SOT-23/SC-59 marking EG

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
75V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
45V
集电极连续输出电流IC
Collector Current(IC)
1A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
160~400
管压降VCE(sat)
Collector-Emitter Saturation Voltage
700mV/0.7V
耗散功率Pc
Power Dissipation
350mW/0.35W
Description & ApplicationsNPN General Purpose Amplifier • This device is designed for general purpose amplifier applications at collector currents to 500mA. • Sourced from process 13
描述与应用NPN通用放大器 •本设备是专为通用放大器应用 集电极电流为500mA。 •来源于过程13
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