BF1101WR N-channel dual-gate MOS-FETs 7V 30MA SOT343 MARKING NC Low noise gain controlled amplifier up to 1 GHz|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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BF1101WR N-channel dual-gate MOS-FETs 7V 30MA SOT343 MARKING NC Low noise gain controlled amplifier up to 1 GHz

Model：BF1101WR
Mark / screen / code / typing：NC
Manufacturer：
Date Code：05+
Package：SOT-343
Standard Package：3000
Min Order：10

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Product description

Drain-Source Voltage （Vds）	7V
Vgs(±) Gate-Source Voltage
Drain Current （Id）	30MA
Drain-Source On-State （Rds）
Vgs （th） Gate-Source Threshold Voltage
Power dissipation （Pd）	0.2W
Description & Applications	N-channel dual-gate MOS-FETs * Short channel transistor with high forward transfer admittance to input capacitance ratio * Low noise gain controlled amplifier up to 1 GHz * Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS * VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment.

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