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BF1101WR N-channel dual-gate MOS-FETs 7V 30MA SOT343 MARKING NC Low noise gain controlled amplifier up to 1 GHz
| Drain-Source Voltage （Vds） | 7V |
|
Vgs(±) Gate-Source Voltage |
|
| Drain Current （Id） | 30MA |
| Drain-Source On-State （Rds） | |
|
Vgs （th） Gate-Source Threshold Voltage |
|
| Power dissipation （Pd） | 0.2W |
| Description & Applications | N-channel dual-gate MOS-FETs
* Short channel transistor with high forward transfer admittance to input
capacitance ratio
* Low noise gain controlled amplifier up to 1 GHz
* Partly internal self-biasing circuit to ensure good cross-modulation
performance during AGC and good
DC stabilization.
APPLICATIONS
* VHF and UHF applications with 3 to 7 V supply voltage, such as
television tuners and professional communications equipment.
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