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BFM505 NPN+NPN Complex Bipolar Transistor 20V 18mA HEF=60~250 9GHZ SOT-363/SC-88 marking NO switch and digital circuit application

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Product description

V(BR) CBO

Collector-Base Voltage

 20V

V(BR) CEO

Collector-Emitter Voltage

 8V
Collector Current(IC)  18MA
Transtion Frequency(fT)  9GHZ
DC Current Gain(hFE)  60~250

VCE (sat)

Collector-Emitter Saturation Voltage

 
Power Dissipation (Pd)  500MW/0.5W
Description & Applications  Dual NPN wideband transistor
• Temperature and hFE matched
• Low noise and high gain
• High gain at low current and low capacitance at low
voltage
• Gold metallization ensures excellent reliability.
Technical Documentation Download Read Online
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