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BFP540 NPN Transistors(BJT) 15V 80mA 30GHz 50~200 SOT-343 marking AT high gain low noise amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
15V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
4.5V
集电极连续输出电流IC
Collector Current(IC)
80mA
截止频率fT
Transtion Frequency(fT)
30GHz
直流电流增益hFE
DC Current Gain(hFE)
50~200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
250mW/0.25W
Description & ApplicationsNPN Silicon RF Transistor • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms= 21 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line
描述与应用NPN硅RF晶体管 •对于最高增益低噪声放大器在1.8 GHz •杰出GMS= 21分贝  噪声系数F =0.9分贝 •高可靠性的黄金金属 •45 - SIEGET线
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