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BFQ67 NPN Transistors(BJT) 20V 50mA 8Ghz 100 400mV/0.4V SOT-23/SC-59 marking V2 satellite TV tuner

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
15V
集电极连续输出电流IC
Collector Current(IC)
50mA
截止频率fT
Transtion Frequency(fT)
7.5Ghz
直流电流增益hFE
DC Current Gain(hFE)
65~150
管压降VCE(sat)
Collector-Emitter Saturation Voltage
400mV/0.4V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & ApplicationsNPN Silicon Planar RF Transistor Features • Small feedback capacitance • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.
描述与应用NPN硅平面RF晶体管 特点  •小反馈电容  •低噪声系数  •高转换频率  • 无铅(Pb)组件  •组件按照RoHS 2002/95/EC和WEEE2002/96/EC 应用 低噪声小信号放大器高达2 GHz。这晶体管能在UHF,VHF和微波频率具有优越的噪声系数和相关增益性。
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