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BFR181W NPN Transistors(BJT) 20V 20mA 8Ghz 50~200 SOT-323/SC-70 marking RF low noise,high gain wideband amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
12V
集电极连续输出电流IC
Collector Current(IC)
20mA
截止频率fT
Transtion Frequency(fT)
8Ghz
直流电流增益hFE
DC Current Gain(hFE)
50~200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
175mW/0.175W
Description & ApplicationsNPN Silicon RF Transistor For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz
描述与应用NPN硅RF晶体管 低噪声,高增益宽带放大器集电极电流从0.5mA到12mA fT = 8 GHz F = 1.45dB at 900 MHz
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