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BFS520 NPN Transistors(BJT) 20V 20mA 9Ghz 60~250 SOT-323/SC-70 marking N2

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
15V
集电极连续输出电流IC
Collector Current(IC)
20mA
截止频率fT
Transtion Frequency(fT)
9Ghz
直流电流增益hFE
DC Current Gain(hFE)
60~250
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
300mW/0.3W
Description & ApplicationsNPN 9 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope.
描述与应用NPN9 GHz的宽带晶体管 特点 高功率增益 低噪声系数 高转换频率 黄金金属确保卓越的可靠性 SOT323信封。 说明 NPN晶体管在一个塑料SOT323信封。
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