My order
Share to:  
Location:Home > Stock Inventory > Product Details

BIC702MBZ-TL MOSFET N-Channel 6V 30mA SOT-143/MPAK-4 marking BZ low leakage/high gain

Hot selling goods

Product description
最大源漏极电压Vds Drain-Source Voltage6V
最大栅源极电压Vgs(±) Gate-Source Voltage6V
最大漏极电流Id Drain Current30mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage0.5-1.0V
耗散功率Pd Power Dissipation150mW/0.15W
Description & ApplicationsBias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ;|yfs| = 29 mS typ. ( f = 1kHz) • Low noise;NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.6 dB typ. (at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C = 200pF, Rs = 0 conditions. • Provide mini mold package; MPAK-4 (SOT-143Rmod)
描述与应用偏置控制单片IC(无外部直流偏置电压GATE1。); 为了降低零部件的成本与PC板空间。 •高|的YFS|; | YFS|= 29毫秒(典型值)。 (F =1kHz时) •低噪音; NF= 1.0 dB(典型值)。 (F =200兆赫),NF= 1.6 dB(典型值)。 (在f=900兆赫) •耐静电; 内置ESD吸收二极管。承受高达200V在C = 200pF,Rs = 0条件。 •提供小型模具包; MPAK-4(SOT-143Rmod)
List of related models

Record / license number:粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00