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BLT50 NPN Transistors(BJT) 20V 500mA/0.5A 470MHz 25 7.5V SOT-223/SC-73 marking BLT50 UHFpower
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
| 截止频率fT Transtion Frequency(fT) | 470MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 25 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 7.5V |
| 耗散功率Pc Power Dissipation | 2W |
| Description & Applications | UHF power transistor FEATURES SMD encapsulation Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in hand-held radio equipment in the 470 MHz communications band. |
| 描述与应用 | UHF功率晶体管 特点 SMD封装 镀金确保 出色的可靠性。 说明 NPN硅平面外延晶体管封装在一个SOT223表面安装的信封和设计主要用于手持式无线电设备在470 MHz的通信频段。 |
