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BSP225 MOSFET P-Channel -250V -225mA 10ohm SOT-223 marking BSP225 high-speed switch no secondary breakdown

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-250V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-0.225A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
10Ω @-200mA,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.8--2.8V
耗散功率Pd
Power Dissipation
1.5W
Description & ApplicationsFEATURES • Very low RDS(on) • Direct interface to C-MOS, TTL, • High-speed switching • No secondary breakdown
描述与应用•非常低的RDS(on) •直接连接C-MOS,TTL, •高速开关 •无二次击穿
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