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BSR15 PNP transistors(BJT) -60V -600mA/- 0.6A 200MHz 30 -1.6V SOT-23/SC-59 marking T7 general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−40V
集电极连续输出电流IC
Collector Current(IC)
−600mA/- 0.6A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
30
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-1.6V
耗散功率Pc
PoWer Dissipation
250mW/0.25W
Description & Applicationssilicon planar epitaxial transistors PNP silicon transistor,in a microminiature plastic envelope ,intended for medium power switching and general purpose amplifier application in trick and thin-film circuits
描述与应用硅平面外延晶体管 PNP硅晶体管,在一个超小型的塑料外壳,适用于中等功率开关和通用放大器应用中厚膜和薄膜电路
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