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BSR43 NPN Transistors(BJT) 90V 1A 100MHz 100~300 500mV/0.5V SOT-89/SC-62/TO-243 marking AR4

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
90V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
80V
集电极连续输出电流IC
Collector Current(IC)
1A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
100~300
管压降VCE(sat)
Collector-Emitter Saturation Voltage
500mV/0.5V
耗散功率Pc
Power Dissipation
1.35W
Description & ApplicationsNPN medium power transistors FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Thick and thin-film circuits • Telephony and general industrial applications.
描述与应用NPN中等功率晶体管 特点 •高电流(最大1 A) •低电压(最大80 V)。 应用 •厚薄膜电路 •电话和一般工业应用。
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