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BSS63 PNP transistors（BJT） -110V -100mA/-0.1A 50~85MHz 30 -250mV/-0.25V SOT-23 marking T3
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −110V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −100V |
| 集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
| 截止频率fT Transtion Frequency(fT) | 50~85MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 30 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −250mV/-0.25V |
| 耗散功率Pc PoWer Dissipation | 330mW/0.33W |
| Description & Applications | PNP high-voltage transistor HIGH VOLTAGE TRANSISTOR complimentary to BSS64 |
| 描述与应用 | PNP高电压晶体管 高压晶体管 互补 BSS64 |
