Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
BUK483-60A MOSFET N-Channel 60V 3.2A SOT-223/SC-73/TO261-4 marking 43-06A density battery designvery low RDS
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
| 最大漏极电流Id Drain Current | 3.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.10Ω/Ohm 3.2A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2.1-4.0V |
| 耗散功率Pd Power Dissipation | 1.8W |
| Description & Applications | N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Ptot Total power dissipation 1.5 W automotive and general purpose Tj Junction temperature 150 ˚C switching applications |
| 描述与应用 | N沟道增强型场效应功率晶体管在 塑料信封适合表面贴装应用。该设备是为了在P合计使用 总功耗为1.5 W 汽车和通用TJ 结温150˚C 开关应用 |
