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CBCX69TR PNP transistors(BJT) -25V -1A 65MHz 85~375 -500mV/-0.5V SOT-89/SC-62 marking BCX69 high current

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-25V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−20V
集电极连续输出电流IC
Collector Current(IC)
-1A
截止频率fT
Transtion Frequency(fT)
65MHz
直流电流增益hFE
DC Current Gain(hFE)
85~375
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−500mV/-0.5V
耗散功率Pc
PoWer Dissipation
1.2W
Description & ApplicationsSILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CBCX68,CBCX69 types are complementary silicon transistor manufactured by epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability
描述与应用硅互补小信号晶体管 产品描述: 中央半导体CBCX68,CBCX69类型是互补硅晶体管由外延平面工艺制造,环氧树脂模压在一个表面贴装封装,专为需要高电流能力的应用设计
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