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CMBT5401 PNP transistors(BJT) -160V -500mA/-0.5A 100~300MHz 60~240 -500mV/-0.5V SOT-23/SC-59 marking 2L
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -160V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −150V |
集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
截止频率fT Transtion Frequency(fT) | 100~300MHz |
直流电流增益hFE DC Current Gain(hFE) | 60~240 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率Pc PoWer Dissipation | 250mW/0.25W |
Description & Applications | SILICON P–N–P HIGH–VOLTAGE TRANSISTOR |
描述与应用 | 硅P-N-P高压晶体管 |