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CPH5702 Complex Bipolar Transistor+doides 3A 30V SOT-153 marking PB

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Product description
三极管BJT类型 TYPENPN
三极管BJT集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)40V
三极管BJT集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)30V
三极管BJT集电极连续输出电流IC Collector Current(IC)3A
三极管BJT截止频率fT Transtion Frequency(fT)450MHz
三极管BJT直流电流增益hFE DC Current Gain(hFE)500mA
三极管BJT管压降VCE(sat) Collector-Emitter Saturation Voltage120~185mV
二极管DIODE类型 TYPE肖特基-单管 SBD-Single
二极管DIODE反向电压VR Reverse Voltage30V
二极管DIODE正向整流电流Io Rectified Current700mA
二极管DIODE正向电压降VF Forward Voltage(Vf)550mV
耗散功率Pc Power Dissipation900mW
Description & ApplicationsFeatures • TR : NPN Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode • DC/DC Converter Applications • Composite type with a NPN transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. • The CPH5702 consists of two chips encapsulated in a package which are equivalent to the CPH3209 and the SB07-03C, respectively. • Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm).
描述与应用特点 •TR:NPN平面外延硅晶体管  SBD:肖特基二极管 •DC / DC转换器应用 •复合型与NPN晶体管和肖特基势垒二极管中包含一个包装促进高密度安装。 •CPH5702由两个芯片封装在一个包中的相当于CPH3209和SB07-03C,分别。 •允许应用套小型和超薄(0.9毫米)的超小尺寸封装。
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