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CZT5551 NPN Transistors(BJT) 180V 600mA/0.6a 100~300MHz 80~250 1.5V SOT-223 marking CZT5551 high voltage amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 180V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 160V |
| 集电极连续输出电流IC Collector Current(IC) | 600mA/0.6A |
| 截止频率fT Transtion Frequency(fT) | 100~300MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 80~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 1.5V |
| 耗散功率Pc Power Dissipation | 2W |
| Description & Applications | NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. |
| 描述与应用 | NPN硅晶体管 中央半导体CZT5551类型是NPN硅晶体管由外延平面工艺，环氧树脂模压在一个表面贴装封装，高电压放大器应用设计制造。 |
