CZT5551 NPN Transistors(BJT) 180V 600mA/0.6a 100~300MHz 80~250 1.5V SOT-223 marking CZT5551 high voltage amplifier|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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CZT5551 NPN Transistors(BJT) 180V 600mA/0.6a 100~300MHz 80~250 1.5V SOT-223 marking CZT5551 high voltage amplifier

Model：CZT5551
Mark / screen / code / typing：CZT5551
Manufacturer：
Date Code：04+ 05+NOPB150
Package：SOT-223
Standard Package：1000
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	180V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	160V
集电极连续输出电流IC Collector Current(IC)	600mA/0.6A
截止频率fT Transtion Frequency(fT)	100~300MHz
直流电流增益hFE DC Current Gain(hFE)	80~250
管压降VCE（sat） Collector-Emitter Saturation Voltage	1.5V
耗散功率Pc Power Dissipation	2W
Description & Applications	NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.
描述与应用	NPN硅晶体管中央半导体CZT5551类型是NPN硅晶体管由外延平面工艺，环氧树脂模压在一个表面贴装封装，高电压放大器应用设计制造。

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