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DDTC123EE-7 NPN Bipolar Digital Transistor (BRT) 100mA/0.1A 2.2k 2.2k sot-523 marking H04

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)2.2KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)2.2KΩ/Ohm
电阻比(R1/R2) Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)20
截止频率fT Transtion Frequency(fT)250MHz
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsFeatures • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTA) • Built-In Biasing Resistors, R1 = R2 • Lead Free/RoHS Compliant • "Green" Device
描述与应用特性 •外延平面模具构建 •互补PNP类型可用(DDTA) •内置偏置电阻R1= R2 •无铅/ RoHS标准 •“绿色”设备
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