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DMN601K-7 MOSFET N-Channel 60V 300mA/0.3A SOT-23/SC-59 marking K7K high density battery designlow RDS/high saturation current capability

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Product description
最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20v
最大漏极电流Id Drain Current300mA/0.3A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance2.9Ω/Ohm @500mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.0-2.5V
耗散功率Pd Power Dissipation350mW/0.35W
Description & Applications· Low On-Resistance: RDS(ON) · Low Gate Threshold Voltage · Low Input Capacitance · Fast Switching Speed · Low Input/Output Leakage · Lead Free By Design/RoHS Compliant (Note 2) · ESD Protected Up To 2kV · "Green" Device (Note 4)
描述与应用·低导通电阻RDS(ON) ·低栅极阈值电压 ·低输入电容 ·开关速度快 ·低输入/输出漏 ·无铅设计/ RoHS规定(注2) ·ESD保护高达2kV ·“绿色”设备(注4)
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