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DTC114EET1 NPN Bipolar Digital Transistor (BRT) 100mA/0.1A 10k 10k SOT-523 marking 8A

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
电阻比(R1/R2) Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)35
截止频率fT Transtion Frequency(fT)250MHz
耗散功率Pc Power Dissipation0.2W/200mW
Description & ApplicationsFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy
描述与应用特性 1)内置启用偏置电阻器的逆变器电路的配置,而无需连接外部输入电阻(见等效电路)。 2)偏置电阻组成的薄膜电阻完全隔离,允许负偏置输入。他们也有优势,几乎完全消除了寄生效应。 3)只有开/关条件需要设置操作,使装置设计容易
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