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DTC115TE NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 100k sot-523/EMT3 marking 9

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)100KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
电阻比(R1/R2) Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)250
截止频率fT Transtion Frequency(fT)250MHz
耗散功率Pc Power Dissipation0.2W/200mW
Description & ApplicationsFeatures 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input,and parasitic effects are almost completely eliminated. 2) Only the on / off conditions need to be set for operation, making device design easy. 3) Higher mounting densities can be achieved.
描述与应用特性 1)内置偏置电阻组成的薄膜电阻 完全隔离,允许负偏置输入和寄生效应几乎完全消除。 2)只有开/关条件需要设置操作,使装置的设计容易。 3)高密度安装,就可以实现。
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