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DTC123EET1 NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 2.2k 2.2k gain8 sot-523 marking 8HN

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)2.2KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)2.2KΩ/Ohm
电阻比(R1/R2) Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)8
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation0.2W/200mW
Description & ApplicationsFeatures • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC−75/SOT−416 Package Can be Soldered Using Wave or Reflow • The Modified Gull−Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die • Pb−Free Packages are Available
描述与应用特性 •简化电路设计 •缩小板面空间 •减少元件数量 •SC-75/SOT-416包装可以焊接使用波或回流 •改进的鸥翼引线在焊接热应力吸收消除模具损坏的可能性 •无铅包可用
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