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DTDS14GP NPN Bipolar Digital Transistor (BRT) 50V 2A 10k SOT-89/MPT3 marking SO
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 2A |
| 基极输入电阻R1 Input Resistance(R1) | |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 1500 |
| 截止频率fT Transtion Frequency(fT) | 300MHz |
| 耗散功率Pc Power Dissipation | 0.5W/500mW |
| Description & Applications | Features 1)High gain,hFE=1500(Typ.) 2) Low Vce(sat). (Typ. 0.16V ) 3) Built-in zener diode gives strong protection against reverse surge by L-load (an inductive load). |
| 描述与应用 | 特性 1）高增益，HFE=1500（典型值） 2）低Vce（sat）。 （典型0.16V） 3）内置齐纳二极管提供了有力保护防止反向浪涌低负载（感性负载）。 |
