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EM6K1 Complex FET 30V 100mA/0.1A SOT-563/EMT6 marking K1 general switch 2.5V drive
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 13Ω@ VGS = 2.5V, ID = 1mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8~1.5V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half. 4) Low on-resistance. 5) Low voltage drive (2.5V) makes this device ideal for portable equipment Applications Interfacing, switching (30V, 100mA) |
| 描述与应用 | N-沟道硅MOSFET 通用开关设备应用 特点 1）两个2SK3019 EMT包装在一个单一的晶体管。 2）MOSFET的元素是独立的，消除干扰。 3）安装成本和面积可减少一半。 4）低导通电阻。 5）低电压驱动（2.5V）使该器件理想用于便携式设备 应用 接口，开关（30V，100mA的） |
