EMD12 NPN+PNP Complex Bipolar Digital Transistor 40V/-10V 100mA/-100mA 150mW/0.15W SOT-563/EMT6 marking D12 switching inverting interface driver circuit|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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EMD12 NPN+PNP Complex Bipolar Digital Transistor 40V/-10V 100mA/-100mA 150mW/0.15W SOT-563/EMT6 marking D12 switching inverting interface driver circuit

Model：EMD12
Mark / screen / code / typing：D12
Manufacturer：
Date Code：06+135Knopb 06+ROHS178K
Package：SOT-563/EMT6
Standard Package：8000
Min Order：100

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Product description

Collector-Base Voltage(VCBO) Q1/Q2	-50V/50V
Collector-Emitter Voltage(VCEO) Q1/Q2	-50V/50V
Collector Current(IC) Q1/Q2	-100mA/100mA
Q1 Input Resistance(R1)	47KΩ/Ohm
Q1 Base-Emitter Resistance(R2)	47KΩ/Ohm
(R1/R2) Q1 Resistance Ratio	1
Q2 Input Resistance(R1)	47KΩ/Ohm
Q2 Base-Emitter Resistance(R2)	47KΩ/Ohm
Q2 (R1/R2)Resistance Ratio	1
DC Current Gain(hFE)
Transtion Frequency(fT)	250MHz
Power Dissipation	150mW/0.15W
Description & Applications	Features •Dual Common Base−Collector Bias Resistor Transistors •Both the DTA144E and DTC144E in a EMT or UMT package.
描述与应用	特点 •双共基极 - 集电极偏置电阻晶体管 •两个DTA144E一个EMT或UMT包的DTC144E

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