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EMD12 NPN+PNP Complex Bipolar Digital Transistor 40V/-10V 100mA/-100mA 150mW/0.15W SOT-563/EMT6 marking D12 switching inverting interface driver circuit
| Collector-Base Voltage(VCBO) Q1/Q2 | -50V/50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 | -50V/50V |
| Collector Current(IC) Q1/Q2 | -100mA/100mA |
| Q1 Input Resistance(R1) | 47KΩ/Ohm |
| Q1 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| (R1/R2) Q1 Resistance Ratio | 1 |
| Q2 Input Resistance(R1) | 47KΩ/Ohm |
| Q2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| Q2 (R1/R2)Resistance Ratio | 1 |
| DC Current Gain(hFE) | |
| Transtion Frequency(fT) | 250MHz |
| Power Dissipation | 150mW/0.15W |
| Description & Applications | Features •Dual Common Base−Collector Bias Resistor Transistors •Both the DTA144E and DTC144E in a EMT or UMT package. |
| 描述与应用 | 特点 •双共基极 - 集电极偏置电阻晶体管 •两个DTA144E一个EMT或UMT包的DTC144E |
