EMH7 NPN+NPN Complex Bipolar Digital Transistor 50V 100mA HEF=100~600 150mW/0.15W SOT-563/EMT6 marking H7 switching inverting interface driver circuit|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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EMH7 NPN+NPN Complex Bipolar Digital Transistor 50V 100mA HEF=100~600 150mW/0.15W SOT-563/EMT6 marking H7 switching inverting interface driver circuit

Model：EMH7
Mark / screen / code / typing：H7
Manufacturer：
Date Code：04NOPB 04+ROHS1RM
Package：SOT-563/EMT6
Standard Package：8000
Min Order：100

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Product description

Collector-Base Voltage(VCBO) Q1/Q2	50V/50V
Collector-Emitter Voltage(VCEO) Q1/Q2	50V/50V
Collector Current(IC) Q1/Q2	100mA/100MA
Q1 Input Resistance(R1)	4.7KΩ/Ohm
Q1 Base-Emitter Resistance(R2)
Q1(R1/R2) Q1 Resistance Ratio
Q2 Input Resistance(R1)	4.7KΩ/Ohm
Q2Base-Emitter Resistance(R2)
Q2(R1/R2) Q2 Resistance Ratio
DC Current Gain(hFE) Q1/Q2	100~600/100~600
Transtion Frequency(fT) Q1/Q2	250MHz/250MHZ
Power Dissipatio Q1/Q2	150mW/0.15W
Description & Applications	Features •General purpose (dual digital transistors) •Two DTC143T chips in a EMT or UMT package
描述与应用	特点 •通用（双数字晶体管） •两个DTC143T的一个EMT或UMT包的芯片

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