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FA1L4M NPN Bipolar Digital Transistor (BRT) 60V 100mA/0.1A 47k 47k gain85-640 SOT-23/SC-59 marking L31

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)47KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
电阻比(R1/R2) Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)85-640
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation0.2W/200mW
Description & ApplicationsFeatures Resistors Built-in Type Complementary to FN1L4M
描述与应用特性 内置电阻型 对管是FN1L4M
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