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FC117 PNP+PNP Complex Bipolar Transistor -20V -500mA HEF=160~560 SOT-163/CPH6 marking 117 switch and digital circuit application

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Product description

V(BR) CBO

Collector-Base Voltage

  -20V

V(BR) CEO

Collector-Emitter Voltage

  -15V
Collector Current(IC)  -500MA/-0.5A
Transtion Frequency(fT)  400MHZ
DC Current Gain(hFE)   160~560

VCE(sat)

Collector-Emitter Saturation Voltage

  -0.56V
Power Dissipation (Pd)  200MW/0.2W
Description & Applications  PNP Epitaxial Planar Silicon Composite Transistor
Low-Frequency
General-Purpose Amp Applications
Features • PNP Epitaxial Planar Silicon Composite Transistor • Low-Frequency General-Purpose Amp Applications • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC117 is formed with two chips, being equivalent to the 2SA1753, placed in one package. • Low collector to emitter saturation voltage. • Excellent in thermal equilibrium and pair capability
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