Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
FCX717TA PNP transistors（BJT） -12V -3A 110MHz 160~240 -230mV/-0.23VV SOT-89/SC-62 marking 77 low saturation voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -12V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流IC Collector Current(IC) | -3A |
| 截止频率fT Transtion Frequency(fT) | 110MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 160~240 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -230mV/-0.23VV |
| 耗散功率Pc PoWer Dissipation | 2W |
| Description & Applications | PNP SILICON POWER (SWITCHING) TRANSISTOR FEATURES * 2W POWER DISSIPATION * 10A Peak Pulse Current * Excellent HFE Characteristics up to 10 Amps * Extremely Low Saturation Voltage E.g. 12mv Typ. * Extremely Low Equivalent On-resistance |
| 描述与应用 | PNP硅POWER（开关）晶体管 特点 *2W功耗 *10A峰值脉冲电流 *优秀HFE特性 *极低的饱和电压 *极低的等效导通电阻; |
