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FDC6392S complex FET MOSFET+schottky diode -20V -2.2A 1A 0.34V SOT-163/SOT23-6 marking 392 DC converter/DC-DC converter/low gate charge/high-speed switch
| 最大源漏极电压Vds Drain-Source Voltage | P沟道 P-Channel |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -20V |
| 最大漏极电流Id Drain Current | -12V |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | -2.2A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 150mΩ@ VGS =4.5 V, ID =2.2A |
| 耗散功率Pd Power Dissipation | -0.6~-1.5V |
| Description & Applications | 肖特基二极管SBD Schottky Barrier Diodes |
| 描述与应用 | 20V |
